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| inchange semiconductor product specification silicon npn power transistors 2SC3345 description ? with to-220 package ? complement to type 2sa1328 ? low collector saturation voltage ? high speed switching time applications ? high current switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 60 v v ceo collector-emitter voltage open base 50 v v ebo emitter-base voltage open collector 6 v i c collector current 12 a i b base current 2 a p c collector power dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SC3345 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ,i b =0 50 v v cesat collector-emitter saturation voltage i c =6a; i b =0.3a 0.4 v v besat base-emitter saturation voltage i c =6a; i b =0.3a 1.2 v i cbo collector cut-off current v cb =60v; i e =0 10 | a i ebo emitter cut-off current v eb =6v; i c =0 10 | a h fe-1 dc current gain i c =1a ; v ce =1v 70 240 h fe-2 dc current gain i c =6a ; v ce =1v 40 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 180 pf f t transition frequency i c =1a ; v ce =5v 90 mhz switching times t on turn-on time 0.2 | s t s storage time 1.0 | s t f fall time i c =6.0a i b1 =- i b2 =0.3a r l =5 |? ;v cc =30v 0.2 | s ? h fe-1 classifications o y 70-140 120-240 inchange semiconductor product specification 3 silicon npn power transistors 2SC3345 package outline fig.2 outline dimensions(unindicated tolerance: ? 0.10 mm) inchange semiconductor product specification 4 silicon npn power transistors 2SC3345 |
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